e 3 note: pins 1 & 2 must be electrically connected at the printed circuit board. ds30362 rev. 5- 2 1 of 3 sbm34 0 www.diodes.co m ? diodes incorporated sbm340 3a surface mo unt schottky barri er rectifi er powermi te a 3 features single phase, half wave, 60hz, resistive or inductive load. for capac itive load, derate current by 20% . case: powermite a 3 case material: molded pl astic. ul flammability classification rating 94v-0 moisture sensitivity: lev el 1 per j-std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish). polarity: see diagram marking: type number weight: 0.072 grams (approximate) mechanical data b c d e g j h k l m a p 1 2 3 p i n 1 p i n 2 p i n 3 , b o t t o m s i d e h e a t s i n k c characteristic symbol value unit peak repetitive revers e voltage working peak revers e voltage dc blocking voltage v rrm v rwm v r 40 v rms reverse voltage v r (rms) 28 v average rectified output curr ent (see also figure 5) i o 3 a non-repetitive peak forward surge curr ent 8.3ms single half sine-wave superimposed on rated load @ t c = 100 c i fsm 50 a typical thermal resistanc e junction to soldering point r q js 3.4 c/w operating temperature range t j -55 to +125 c storage temperature range t stg -55 to +150 c guard ring die construc tion for transient protection low power loss, high efficiency low forward voltage drop for use in low voltage, high frequency inverters , free wheeling, and pol arity protection applications lead free finish/roh s complia nt (note 2) maximum ratings @ t a = 25 c unless otherwise s pecified electri cal character isti cs @ t a = 25 c unless otherwise s pecified characteristic symbol min typ max unit test condition reverse break down voltage (note 1) v (br)r 40 ? ? v i r = 0.5ma forward voltage v fm ? 0.46 0.40 0.57 0.54 0.50 0.44 0.61 0.58 v i f = 3a, t j = 25 c i f = 3a, t j = 125 c i f = 6a, t j = 25 c i f = 6a, t j = 125 c reverse cur rent (note 1) i rm ? 15 ? 500 20 m a ma t j = 25 c, v r = 40v t j = 100 c, v r = 40v total capacitance c t ? 180 ? pf f = 1.0mhz, v r = 4.0v dc powermit e a 3 dim min max a 4.03 4.09 b 6.40 6.61 c .889 nom d 1.83 nom e 1.10 1.14 g .178 nom h 5.01 5.17 j 4.37 4.43 k .178 nom l .71 .77 m .36 .46 p 1.73 1.83 all dimensions in m m notes: 1. short durat ion test pulse used to minimize self-heating effect. 2. rohs revision 13.2.2003. high temperature solder exemption applied, see eu directive annex n ote 7.
ds30362 rev. 5 - 2 2 of 3 sbm34 0 www.diodes.co m 1 0 0 1 0 1 0 .1 0 .0 1 1 0 0 0 1 0 ,0 0 0 0 2 0 3 0 4 0 v , in s t a n t a n e o u s r e v e r s e v o l t a g e ( v ) r f ig . 2 t y p ic a l r e v e rs e c h a ra c te ri s ti c s 1 0 t = + 25 c j t = + 12 5 c j t = - 25 c j t = +7 5 c j 0 10 20 30 40 50 1 10 10 0 i , p e a k f o r w a r d s u r g e c u r r e n t ( a ) f s m n u m be r o f c yc le s a t 6 0 h z fi g. 3 m ax n on -r ep et iti ve p ea k fo rw ar d su rg e c ur re nt sin gle h alf -s ine -w av e t = 10 0c c 0 .1 1 .0 1 0 0 .1 0 .3 0 .4 0 .2 0 .5 0 .6 0 .7 0 .8 i , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) f v , in s t a n t a n e o u s f o rwa r d v o l t a g e ( v ) f f ig . 1 t y p ic a l f o r w a rd c h a ra c te ri s ti c s t = + 2 5 c j t = + 7 5 c j t = + 1 2 5 c j t = - 2 5 c j 1 0 1 0 0 1 0 0 0 0 .1 1 1 0 1 0 0 c , t o t a l c a p a c i t a n c e ( p f ) t v , d c r e v e r s e v o l t a g e ( v ) r f ig . 4 t y p ic a l c a pa c ita n c e v s . r e v e rs e v o lta g e f = 1 m h z t = 2 5 c j
ds30362 rev. 5- 2 3 of 3 sbm34 0 www.diodes.co m 0 1 2 3 4 0 1 2 3 4 5 6 7 p , a v e r a g e f o r w a r d p o w e r d i s s i p a t i o n ( w ) f ( a v ) i , a ve r ag e fo r w ar d c u r r en t (a ) f( a v) fi g. 6 f or w ar d po w er d is si p at io n n ot e 4 n ot e 5 0 0.5 1 1.5 2.5 2 3 3.5 4 25 50 75 100 125 150 i , d c f o r w a r d c u r r e n t ( a ) f t , am bie nt tem per a tur e (c ) a fig . 5 dc fo rwa rd c urre nt d era ting not e 3 not e 4 not e 5 s b m 3 4 0 = p r o d u c t t y p e m a r k i n g c o d e = m a n u f a c t u r e r s ? c o d e m a r k i n g y y w w = d a t e c o d e m a r k i n g y y = l a s t d i g i t o f y e a r e x : 0 2 f o r 2 0 0 2 w w = w e e k c o d e 0 1 t o 5 2 ( k ) = f a c t o r y d e s i g n a t o r y y w w ( k ) s b m 3 4 0 marking i nformat ion notes: 3. t a = t soldering point , r q js = 3.4 c/w, r q sa = 0 c/w. 4. device mounted on getek subs trate, 2? x2?, 2 oz. copper, double-sided, cathode pad dimensions 0.75? x 1.0?, anode pad dimensions 0.25? x 1.0?. r q ja in range of 20-40c/w. 5. device mounted on fr-4 s ubstrate, 2?x2?, 2 oz. copper, single-sided, pad layout as per diodes inc. suggested pad layout document ap02001 which c an be found on our website at htt p://www.diodes.com/datasheets/ap02001. pdf. r q ja in range of 95-115c/w. 6. for packaging details, go to our website at http: //www.diodes.com/datasheets/ap02007.pdf . device packaging shipping SBM340-13-F powermit e a 3 5000/tape & reel orderi ng inform ation powermit e is a registered trademark of microsemi corporation. (note 6) i m p o r t a n t n o t i c e d i o d e s i n c o r p o r a t e d a n d i t s s u b s i d i a r i e s r e s e r v e t h e r i g h t t o m a k e m o d i f i c a t i o n s , e n h a n c e m e n t s , i m p r o v e m e n t s , c o r r e c t i o n s o r o t h e r c h a n g e s w i t h o u t f u r t h e r n o t i c e t o a n y p r o d u c t h e r e i n . d i o d e s i n c o r p o r a t e d d o e s n o t a s s u m e a n y l i a b i l i t y a r i s i n g o u t o f t h e a p p l i c a t i o n o r u s e o f a n y p r o d u c t d e s c r i b e d h e r e i n ; n e i t h e r d o e s i t c o n v e y a n y l i c e n s e u n d e r i t s p a t e n t r i g h t s , n o r t h e r i g h t s o f o t h e r s . t h e u s e r o f p r o d u c t s i n s u c h a p p l i c a t i o n s s h a l l a s s u m e a l l r i s k s o f s u c h u s e a n d w i l l a g r e e t o h o l d d i o d e s i n c o r p o r a t e d a n d a l l t h e c o m p a n i e s w h o s e p r o d u c t s a r e r e p r e s e n t e d o n o u r w e b s i t e , h a r m l e s s a g a i n s t a l l d a m a g e s . l i f e s u p p o r t d i o d e s i n c o r p o r a t e d p r o d u c t s a r e n o t a u t h o r i z e d f o r u s e a s c r i t i c a l c o m p o n e n t s i n l i f e s u p p o r t d e v i c e s o r s y s t e m s w i t h o u t t h e e x p r e s s e d w r i t t e n a p p r o v a l o f t h e p r e s i d e n t o f d i o d e s i n c o r p o r a t e d .
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